RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Compare
Samsung 1600 CL10 Series 8GB vs Crucial Technology BLS4G4D240FSA.8FADG 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
32
Around 22% lower latency
Reasons to consider
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Report a bug
Faster reading speed, GB/s
16.5
16.1
Average value in the tests
Faster write speed, GB/s
11.7
10.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
32
Read speed, GB/s
16.1
16.5
Write speed, GB/s
10.1
11.7
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2764
2847
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMU32GX4M4D3000C16 8GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3866C18-4GTZ 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Samsung M393B2G70BH0-CH9 16GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX3200C16D4/4GX 4GB
Corsair CML16GX3M2A1600C10 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMK32GX4M4B3333C16 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-4266C19-32GTZR 32GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT12864AA667.K8F 1GB
Report a bug
×
Bug description
Source link