Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT12864AA667.K8F 1GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT12864AA667.K8F 1GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score
star star star star star
Crucial Technology CT12864AA667.K8F 1GB

Crucial Technology CT12864AA667.K8F 1GB

Differences

  • Below the latency in the PassMark tests, ns
    24 left arrow 49
    Around 51% lower latency
  • Faster write speed, GB/s
    12.5 left arrow 1,871.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62% higher bandwidth
  • Faster reading speed, GB/s
    4 left arrow 16
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT12864AA667.K8F 1GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR2
  • Latency in PassMark, ns
    24 left arrow 49
  • Read speed, GB/s
    16.0 left arrow 4,345.9
  • Write speed, GB/s
    12.5 left arrow 1,871.0
  • Memory bandwidth, mbps
    19200 left arrow 5300
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 5-5-5-15 / 667 MHz
  • Ranking PassMark (The more the better)
    2925 left arrow 649
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