Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT12864AA667.K8F 1GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

Crucial Technology CT12864AA667.K8F 1GB

Crucial Technology CT12864AA667.K8F 1GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 49

周辺 51% 低遅延
書き込み速度の高速化、GB/s

12.5 1,871.0

テスト平均値
より高いメモリ帯域幅、mbps

19200 5300

周辺 3.62% 高帯域

Crucial Technology CT12864AA667.K8F 1GB

考慮すべき理由
Crucial Technology CT12864AA667.K8F 1GB

バグを報告する

読み出し速度の高速化、GB/s

4 16

テスト平均値

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology CT12864AA667.K8F 1GB

主な特徴

メモリータイプ

DDR4 DDR2
PassMarkにおけるレイテンシー、ns

24 49
読み出し速度、GB/s

16.0 4,345.9
書き込み速度、GB/秒

12.5 1,871.0
メモリ帯域幅、mbps

19200 5300

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 5-5-5-15 / 667 MHz
ランキングPassMark（多ければ多いほど良い）

2925 649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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