RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Compare
Samsung 1600 CL10 Series 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
29
Around 14% lower latency
Faster reading speed, GB/s
16.1
12.2
Average value in the tests
Faster write speed, GB/s
10.1
9.6
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
29
Read speed, GB/s
16.1
12.2
Write speed, GB/s
10.1
9.6
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
2443
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R538G1601U2S 8GB
Samsung M378A2G43MB1-CTD 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Samsung M393B2G70BH0-YK0 16GB
Super Talent F24UB16GV 16GB
Samsung M393B5270CH0-CH9 4GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-16GTZSW 16GB
Kingston 9905403-174.A00LF 2GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Kingston 9905584-016.A00LF 4GB
Kingston KHX3600C18D4/16GX 16GB
TwinMOS 9DCTCO4E-TATP 8GB
SK Hynix GKE800UD102408-2400 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Kingston KHX1600C9D3/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
AMD AE34G1601U1 4GB
AMD R748G2400U2S-UO 8GB
Kingston HP698651-154-MCN 8GB
Golden Empire CL19-19-19 D4-2666 4GB
Samsung M471B5273EB0-CK0 4GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Report a bug
×
Bug description
Source link