Samsung 1600 CL10 Series 8GB
Hyundai Inc AR32C16S8K2HU416R 8GB

Samsung 1600 CL10 Series 8GB vs Hyundai Inc AR32C16S8K2HU416R 8GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

Differences

  • Below the latency in the PassMark tests, ns
    20 left arrow 25
    Around -25% lower latency
  • Faster reading speed, GB/s
    19 left arrow 16.1
    Average value in the tests
  • Faster write speed, GB/s
    15.1 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Hyundai Inc AR32C16S8K2HU416R 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 20
  • Read speed, GB/s
    16.1 left arrow 19.0
  • Write speed, GB/s
    10.1 left arrow 15.1
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 3410
RAM Latency Calculator
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