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Samsung 1600 CL10 Series 8GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Compare
Samsung 1600 CL10 Series 8GB vs Micron Technology 4ATF51264HZ-2G3E2 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Micron Technology 4ATF51264HZ-2G3E2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
29
Around 14% lower latency
Faster reading speed, GB/s
16.1
15.8
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264HZ-2G3E2 4GB
Report a bug
Faster write speed, GB/s
12.2
10.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
29
Read speed, GB/s
16.1
15.8
Write speed, GB/s
10.1
12.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2764
2865
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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