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Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF51272PZ-2G1A2 4GB

Samsung 1600 CL10 Series 8GB vs Micron Technology 9ASF51272PZ-2G1A2 4GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 43
    Around 42% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 11.4
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 9.5
    Average value in the tests
Micron Technology 9ASF51272PZ-2G1A2 4GB Reasons to consider
Micron Technology 9ASF51272PZ-2G1A2 4GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 43
  • Read speed, GB/s
    16.1 left arrow 11.4
  • Write speed, GB/s
    10.1 left arrow 9.5
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2532

Samsung 1600 CL10 Series 8GB RAM comparisons

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Micron Technology 9ASF51272PZ-2G1A2 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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