RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF51272PZ-2G1A2 4GB

Samsung 1600 CL10 Series 8GB vs Micron Technology 9ASF51272PZ-2G1A2 4GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 43
    左右 42% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 9.5
    测试中的平均数值
Micron Technology 9ASF51272PZ-2G1A2 4GB 需要考虑的原因
Micron Technology 9ASF51272PZ-2G1A2 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 43
  • 读取速度，GB/s
    16.1 left arrow 11.4
  • 写入速度，GB/s
    10.1 left arrow 9.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2532

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Micron Technology 9ASF51272PZ-2G1A2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Corsair CMK16GX4M2E4000C19 8GB
Corsair CMK16GX4M2E4000C19 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Good Wealth Technology Ltd. 8GB
Good Wealth Technology Ltd. 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMW16GX4M2Z4000C18 8GB
Corsair CMW16GX4M2Z4000C18 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMWX8GD3200C16W2E 8GB
Corsair CMWX8GD3200C16W2E 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 99U5663-001.A00G 16GB
Kingston 99U5663-001.A00G 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Kingston 9965600-012.A02G 16GB
Kingston 9965600-012.A02G 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3600C17-8GTZKW 8GB
G Skill Intl F4-3600C17-8GTZKW 8GB
内存RAM
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Apacer Technology 78.CAGPP.ARC0B 8GB
Apacer Technology 78.CAGPP.ARC0B 8GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Corsair CMW32GX4M2E3200C16 16GB
Corsair CMW32GX4M2E3200C16 16GB
内存RAM