RAM comparison Samsung DDR3 8GB 1600MHz 8GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Samsung DDR3 8GB 1600MHz 8GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Overall score

Samsung DDR3 8GB 1600MHz 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB

Reasons to consider
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Below the latency in the PassMark tests, ns

26 43

Around -65% lower latency
Faster reading speed, GB/s

18.2 14.9

Average value in the tests
Faster write speed, GB/s

17.3 9.6

Average value in the tests
Higher memory bandwidth, mbps

21300 12800

Around 1.66 higher bandwidth

Complete list of technical specifications

Samsung DDR3 8GB 1600MHz 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2506 3938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns