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Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Samsung DDR3 8GB 1600MHz 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Differences Specifications Comments

Differences

Samsung DDR3 8GB 1600MHz 8GB Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
  • Faster reading speed, GB/s
    14.9 left arrow 7.8
    Average value in the tests
  • Faster write speed, GB/s
    9.6 left arrow 6.1
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    41 left arrow 43
    Around -5% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 41
  • Read speed, GB/s
    14.9 left arrow 7.8
  • Write speed, GB/s
    9.6 left arrow 6.1
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 1512

Samsung DDR3 8GB 1600MHz 8GB RAM comparisons

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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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