RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung DDR3 8GB 1600MHz 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
Compare
Samsung DDR3 8GB 1600MHz 8GB vs Panram International Corporation PUD42133C138G4NJK 8GB
Overall score
Samsung DDR3 8GB 1600MHz 8GB
Overall score
Panram International Corporation PUD42133C138G4NJK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Below the latency in the PassMark tests, ns
43
74
Around 42% lower latency
Faster write speed, GB/s
9.6
9.0
Average value in the tests
Reasons to consider
Panram International Corporation PUD42133C138G4NJK 8GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
74
Read speed, GB/s
14.9
14.9
Write speed, GB/s
9.6
9.0
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2506
1925
Samsung DDR3 8GB 1600MHz 8GB RAM comparisons
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB
Panram International Corporation PUD42133C138G4NJK 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-447.A00LF 4GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3466C16-8GTZSK 8GB
Kingston HX318C10FK/4 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
Samsung DDR3 8GB 1600MHz 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
Transcend Information JM3200HLB-16G 16GB
Samsung M471B5273EB0-CK0 4GB
Kingmax Semiconductor GLAF62F-D8---------- 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Mushkin 991679ES 996679ES 2GB
Crucial Technology BL16G32C16S4B.M16FE1 16GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2133C15-16GVR 16GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMK64GX4M4C3000C15 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMA82GR7AFR4N-VK 16GB
Report a bug
×
Bug description
Source link