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Samsung DDR3 8GB 1600MHz 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Samsung DDR3 8GB 1600MHz 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Differences Specifications Comments

Differences

Samsung DDR3 8GB 1600MHz 8GB Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    18 left arrow 43
    Around -139% lower latency
  • Faster reading speed, GB/s
    20.4 left arrow 14.9
    Average value in the tests
  • Faster write speed, GB/s
    17.2 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 18
  • Read speed, GB/s
    14.9 left arrow 20.4
  • Write speed, GB/s
    9.6 left arrow 17.2
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 3814

Samsung DDR3 8GB 1600MHz 8GB RAM comparisons

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
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