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Samsung M3 78T2863EHS-CF7 1GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
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Faster reading speed, GB/s
4
11.1
Average value in the tests
Reasons to consider
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
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Below the latency in the PassMark tests, ns
30
59
Around -97% lower latency
Faster write speed, GB/s
6.1
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
30
Read speed, GB/s
4,833.8
11.1
Write speed, GB/s
2,123.3
6.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
731
1254
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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