RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3600C19-16GVRB 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs G Skill Intl F4-3600C19-16GVRB 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
G Skill Intl F4-3600C19-16GVRB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
18.9
Average value in the tests
Faster write speed, GB/s
2,123.3
16.2
Average value in the tests
Reasons to consider
G Skill Intl F4-3600C19-16GVRB 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
59
Around -111% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3600C19-16GVRB 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
28
Read speed, GB/s
4,833.8
18.9
Write speed, GB/s
2,123.3
16.2
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
731
3835
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
G Skill Intl F4-3600C19-16GVRB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung M393A2K40BB2-CTD 16GB
Samsung M471B5673EH1-CH9 2GB
Samsung M471B5173QH0-YK0 4GB
Kingston KN2M64-ETB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX1600C9D3/8G 8GB
Transcend Information JM2666HLB-16G 16GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4000C18-32GVK 32GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
Kingston KHX2666C13/16GX 16GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Samsung M391B5673EH1-CH9 2GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CM4X8GF2400C16K4 8GB
Samsung M386B4G70DM0-CMA4 32GB
Mushkin MR[A/B]4U346GJJM8G 8GB
Report a bug
×
Bug description
Source link