RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Gloway International (HK) STK4U2400D17041C 4GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Gloway International (HK) STK4U2400D17041C 4GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Gloway International (HK) STK4U2400D17041C 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Below the latency in the PassMark tests, ns
59
71
Around 17% lower latency
Faster reading speed, GB/s
4
15.8
Average value in the tests
Reasons to consider
Gloway International (HK) STK4U2400D17041C 4GB
Report a bug
Faster write speed, GB/s
7.9
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Gloway International (HK) STK4U2400D17041C 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
71
Read speed, GB/s
4,833.8
15.8
Write speed, GB/s
2,123.3
7.9
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
1757
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Gloway International (HK) STK4U2400D17041C 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863EHS-CF7 1GB
Gloway International (HK) STK4U2400D17041C 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information AQD-SD4U4GN21-SG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M471A5143EB0-CPB 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Maxsun MSD416G26Q3 16GB
Kingston 9965525-140.A00LF 8GB
Kingston 99U5625-015.A00G 16GB
Samsung M471A1K43DB1-CWE 8GB
AMD R948G3206U2S 8GB
Elpida EBE21UE8ACUA-8G-E 2GB
AMD R748G2400U2S-UO 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston 9905624-025.A00G 8GB
Samsung M393B1K70CH0-CH9 8GB
V-Color Technology Inc. TA48G30S815GK 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Report a bug
×
Bug description
Source link