RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Report a bug
Below the latency in the PassMark tests, ns
41
59
Around -44% lower latency
Faster reading speed, GB/s
7.8
4
Average value in the tests
Faster write speed, GB/s
6.1
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
41
Read speed, GB/s
4,833.8
7.8
Write speed, GB/s
2,123.3
6.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
731
1512
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB RAM comparisons
Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378T5663QZ3-CF7 2GB
Corsair CM4X16GE2666C16K4 16GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C16-4GTZB 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
Smart Modular SH564128FH8NZQNSCG 4GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Kingston KVR533D2N4 512MB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M378A5143TB2-CTD 4GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMD32GX4M4C3000C15 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Kingston 9965525-140.A00LF 8GB
Samsung M471A5644EB0-CPB 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3000C16-16GSXFB 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMK16GX4M4C3000C16 4GB
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A2G40EB1-CRC 16GB
Report a bug
×
Bug description
Source link