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Samsung M3 78T2863EHS-CF7 1GB
InnoDisk Corporation 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs InnoDisk Corporation 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
InnoDisk Corporation 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Reasons to consider
InnoDisk Corporation 16GB
Report a bug
Below the latency in the PassMark tests, ns
38
59
Around -55% lower latency
Faster reading speed, GB/s
7.7
4
Average value in the tests
Faster write speed, GB/s
8.2
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
InnoDisk Corporation 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
38
Read speed, GB/s
4,833.8
7.7
Write speed, GB/s
2,123.3
8.2
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
731
2163
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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