RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Samsung M3 78T2863EHS-CF7 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Overall score
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Differences Specifications Comments

Differences

Samsung M3 78T2863EHS-CF7 1GB Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 20.4
    Average value in the tests
  • Faster write speed, GB/s
    2,123.3 left arrow 18.1
    Average value in the tests
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    18 left arrow 59
    Around -228% lower latency
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    59 left arrow 18
  • Read speed, GB/s
    4,833.8 left arrow 20.4
  • Write speed, GB/s
    2,123.3 left arrow 18.1
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    731 left arrow 3529

Samsung M3 78T2863EHS-CF7 1GB RAM comparisons

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Avant Technology J641GU42J5213N0 8GB
Avant Technology J641GU42J5213N0 8GB
Memory RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
SK Hynix HMA84GL7AFR4N-UH 32GB
SK Hynix HMA84GL7AFR4N-UH 32GB
Memory RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingston HP26D4U9S1ME-4 4GB
Kingston HP26D4U9S1ME-4 4GB
Memory RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9905663-030.A00G 16GB
Kingston 9905663-030.A00G 16GB
Memory RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 9965640-008.A01G 32GB
Kingston 9965640-008.A01G 32GB
Memory RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9905734-022.A00G 16GB
Kingston 9905734-022.A00G 16GB
Memory RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Memory RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
Memory RAM
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT51264BF160B.M16F 4GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
Memory RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
Memory RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Samsung M378A4G43AB2-CVF 32GB
Samsung M378A4G43AB2-CVF 32GB
Memory RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-8GTRG 8GB
G Skill Intl F4-3200C14-8GTRG 8GB
Memory RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
Kingston 9905598-044.A00G 16GB
Kingston 9905598-044.A00G 16GB
Memory RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-3200C14-8GTRG 8GB
G Skill Intl F4-3200C14-8GTRG 8GB
Memory RAM