RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
20.4
Average value in the tests
Faster write speed, GB/s
2,123.3
18.1
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
59
Around -228% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
18
Read speed, GB/s
4,833.8
20.4
Write speed, GB/s
2,123.3
18.1
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
3529
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CMD16GX4M2B3000C15 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Samsung M391B5273CH0-CH9 4GB
Corsair CMK64GX4M4B2800C14 16GB
Samsung M393B1G70QH0-YK0 8GB
Kingston KKRVFX-MIE 8GB
Kingston K531R8-MIN 4GB
Kingston 9905630-063.A00G 16GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-2133C15-8GVK 8GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2133C15-8GSQ 8GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Kingston 9905403-038.A00LF 4GB
Kingston KHYXPX-MIE 8GB
Report a bug
×
Bug description
Source link