Samsung M3 78T2863EHS-CF7 1GB vs V-GEN D4H8GL26A8TS6 8GB

Overall score

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Overall score

V-GEN D4H8GL26A8TS6 8GB

V-GEN D4H8GL26A8TS6 8GB

Differences Specifications Comments

Differences

Samsung M3 78T2863EHS-CF7 1GB

Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB

Below the latency in the PassMark tests, ns

59 61

Around 3% lower latency
Faster reading speed, GB/s

4 17.6

Average value in the tests

V-GEN D4H8GL26A8TS6 8GB

Reasons to consider
V-GEN D4H8GL26A8TS6 8GB

Faster write speed, GB/s

8.5 2,123.3

Average value in the tests
Higher memory bandwidth, mbps

17000 6400

Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 78T2863EHS-CF7 1GB

V-GEN D4H8GL26A8TS6 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

59 61
Read speed, GB/s

4,833.8 17.6
Write speed, GB/s

2,123.3 8.5
Memory bandwidth, mbps

6400 17000

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

731 2113

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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