RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863QZS-CF7 1GB
Transcend Information TS512MLH64V1H 4GB
Compare
Samsung M3 78T2863QZS-CF7 1GB vs Transcend Information TS512MLH64V1H 4GB
Overall score
Samsung M3 78T2863QZS-CF7 1GB
Overall score
Transcend Information TS512MLH64V1H 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863QZS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
16.4
Average value in the tests
Reasons to consider
Transcend Information TS512MLH64V1H 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
69
Around -200% lower latency
Faster write speed, GB/s
11.7
1,857.7
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863QZS-CF7 1GB
Transcend Information TS512MLH64V1H 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
23
Read speed, GB/s
4,217.2
16.4
Write speed, GB/s
1,857.7
11.7
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
668
2575
Samsung M3 78T2863QZS-CF7 1GB RAM comparisons
Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB
Transcend Information TS512MLH64V1H 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863QZS-CF7 1GB
Transcend Information TS512MLH64V1H 4GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-2400C15-4GIS 4GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Samsung M3 93T5750CZA-CE6 2GB
takeMS International AG TMS2GB264D082805EQ 2GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Kingston KVR16N11/8-SP 8GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6AFR8N-UH 16GB
A-DATA Technology VDQVE1B16 2GB
takeMS International AG TMS2GS264D082665EQ 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Corsair CMSO4GX3M1C1600C11 4GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SK Hynix HMA82GU7AFR8N-UH 16GB
Kingston 9905403-061.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905624-013.A00G 8GB
Samsung M3 93T5750CZA-CE6 2GB
Apacer Technology GD2.1542WS.001 8GB
Report a bug
×
Bug description
Source link