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Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 4ATF51264HZ-2G3B1 4GB

Samsung M3 78T3354BZ0-CCC 256MB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

Overall score
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Overall score
star star star star star
Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Differences Specifications Comments

Differences

Samsung M3 78T3354BZ0-CCC 256MB Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
  • Faster reading speed, GB/s
    2 left arrow 14.8
    Average value in the tests
Micron Technology 4ATF51264HZ-2G3B1 4GB Reasons to consider
Micron Technology 4ATF51264HZ-2G3B1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 46
    Around -31% lower latency
  • Faster write speed, GB/s
    11.2 left arrow 1,519.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 3200
    Around 6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 35
  • Read speed, GB/s
    2,909.8 left arrow 14.8
  • Write speed, GB/s
    1,519.2 left arrow 11.2
  • Memory bandwidth, mbps
    3200 left arrow 19200
Other
  • Description
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    241 left arrow 2336

Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons

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Micron Technology 4ATF51264HZ-2G3B1 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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