RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M378A5244CB0-CWE 4GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Samsung M378A5244CB0-CWE 4GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Samsung M378A5244CB0-CWE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
16.7
Average value in the tests
Reasons to consider
Samsung M378A5244CB0-CWE 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
46
Around -35% lower latency
Faster write speed, GB/s
12.3
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
25600
3200
Around 8 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M378A5244CB0-CWE 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
34
Read speed, GB/s
2,909.8
16.7
Write speed, GB/s
1,519.2
12.3
Memory bandwidth, mbps
3200
25600
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
3-3-3-12 / 400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
241
2584
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Samsung M378A5244CB0-CWE 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KP4T2F-PSB 4GB
Kingston 9905702-135.A00G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M378A5244CB0-CWE 4GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-4133C19-8GTZC 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3600C18-8GTZR 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMK64GX4M8B2800C14 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
A-DATA Technology VDQVE1B16 2GB
Apacer Technology 78.CAGMT.40C0B 8GB
A-DATA Technology DOVF1B163G2G 2GB
Essencore Limited KD48GU88C-26N190A 8GB
Corsair CMK32GX5M2B5200C40 16GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Mushkin MRA4S300GJJM16G 16GB
Samsung DDR3 8GB 1600MHz 8GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2800C15-16GVR 16GB
Report a bug
×
Bug description
Source link