RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
13.5
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
46
Around -48% lower latency
Faster write speed, GB/s
10.6
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
17000
3200
Around 5.31 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
31
Read speed, GB/s
2,909.8
13.5
Write speed, GB/s
1,519.2
10.6
Memory bandwidth, mbps
3200
17000
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
241
2330
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR533D2N4 512MB
Kingston 9905701-141.A00G 16GB
Kingston 9905403-156.A00LF 2GB
Essencore Limited IM48GU48N28-GGGHM 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Kingston 99U5469-045.A00LF 4GB
Kingston 9965589-006.E00G 8GB
Essencore Limited KD48GU88C-26N1600 8GB
V-GEN D4S4GL32A16TS 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston KHX2400C15D4/8G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CM4X16GD3200C16K4E 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Kingston 9905678-007.A00G 8GB
Kingston 9905458-017.A01LF 4GB
Corsair CMK32GX4M4B4000C19 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
INTENSO 5641152 4GB
A-DATA Technology DQVE1908 512MB
Teikon TMA81GS6AFR8N-UHSC 8GB
PNY Electronics PNY 2GB
V-GEN D4S8GL32A8TS 8GB
Report a bug
×
Bug description
Source link