RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
Panram International Corporation PUD42133C158G2VS 8GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Panram International Corporation PUD42133C158G2VS 8GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Panram International Corporation PUD42133C158G2VS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
4
16.4
Average value in the tests
Faster write speed, GB/s
2,168.2
12.2
Average value in the tests
Reasons to consider
Panram International Corporation PUD42133C158G2VS 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
60
Around -88% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Panram International Corporation PUD42133C158G2VS 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
32
Read speed, GB/s
4,595.2
16.4
Write speed, GB/s
2,168.2
12.2
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
941
2871
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Panram International Corporation PUD42133C158G2VS 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Kingston K821PJ-MIB 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Panram International Corporation PUD42133C158G2VS 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C19-8GTZRB 8GB
Samsung M471B5173QH0-YK0 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
SK Hynix DDR2 800 2G 2GB
Corsair CMK16GX4M4B3866C18 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Patriot Memory (PDP Systems) PSD48G21332S 8GB
Hexon Technology Pte Ltd HEXON 1GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Corsair CML8GX3M2A1600C9 4GB
Kingston 99U5712-009.A00G 16GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-2133C15-4GRR 4GB
Kingston 9965433-406.A00LF 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
AMD AE34G1601U1 4GB
Panram International Corporation D4N2400PS-8G 8GB
Avant Technology F6451U64F9333G 4GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK16GX4M4A2666C16 4GB
Report a bug
×
Bug description
Source link