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Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Overall score
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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Differences Specifications Comments

Differences

Samsung M3 78T5663RZ3-CE6 2GB Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 18.2
    Average value in the tests
  • Faster write speed, GB/s
    2,168.2 left arrow 15.3
    Average value in the tests
Patriot Memory (PDP Systems) 3400 C16 Series 8GB Reasons to consider
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 60
    Around -122% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    60 left arrow 27
  • Read speed, GB/s
    4,595.2 left arrow 18.2
  • Write speed, GB/s
    2,168.2 left arrow 15.3
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    941 left arrow 3628

Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB RAM comparisons

TwinMOS 8DPT5MK8-TATP 2GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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