RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Compare
Samsung M3 78T5663RZ3-CF7 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Overall score
Samsung M3 78T5663RZ3-CF7 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CF7 2GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
45
65
Around -44% lower latency
Faster reading speed, GB/s
6.9
4
Average value in the tests
Faster write speed, GB/s
6.3
2,784.6
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
45
Read speed, GB/s
4,806.8
6.9
Write speed, GB/s
2,784.6
6.3
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, TBD2 V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
932
1499
Samsung M3 78T5663RZ3-CF7 2GB RAM comparisons
Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB RAM comparisons
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R7416G2400U2S 16GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Samsung M471B5673FH0-CF8 2GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
A-DATA Technology DDR2 800G 2GB
Kingston KTP9W1-MIE 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
G Skill Intl F3-1333C9-4GIS 4GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M393A2K43BB1-CPB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Kingston 99U5474-010.A00LF 2GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
Kingston KHX1600C9D3/8G 8GB
Micron Technology 16GB 2133MHz DIMM 16GB
Report a bug
×
Bug description
Source link