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Samsung M3 78T6553EZS-CF7 512MB
Mushkin 99[2/7/4]198F 8GB

Samsung M3 78T6553EZS-CF7 512MB vs Mushkin 99[2/7/4]198F 8GB

Overall score
star star star star star
Samsung M3 78T6553EZS-CF7 512MB

Samsung M3 78T6553EZS-CF7 512MB

Overall score
star star star star star
Mushkin 99[2/7/4]198F 8GB

Mushkin 99[2/7/4]198F 8GB

Differences Specifications Comments

Differences

Samsung M3 78T6553EZS-CF7 512MB Reasons to consider
Samsung M3 78T6553EZS-CF7 512MB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 12.6
    Average value in the tests
Mushkin 99[2/7/4]198F 8GB Reasons to consider
Mushkin 99[2/7/4]198F 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 47
    Around -81% lower latency
  • Faster write speed, GB/s
    8.7 left arrow 2,021.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T6553EZS-CF7 512MB
Mushkin 99[2/7/4]198F 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    47 left arrow 26
  • Read speed, GB/s
    3,575.4 left arrow 12.6
  • Write speed, GB/s
    2,021.5 left arrow 8.7
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    563 left arrow 2257

Samsung M3 78T6553EZS-CF7 512MB RAM comparisons

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Mushkin 99[2/7/4]198F 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Samsung M3 78T6553EZS-CF7 512MB
Samsung M3 78T6553EZS-CF7 512MB
Mushkin 99[2/7/4]198F 8GB
Mushkin 99[2/7/4]198F 8GB
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