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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology BLS4G4D26BFSB.8FB 4GB

Overall score
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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 13
    Average value in the tests
  • Faster write speed, GB/s
    2,622.0 left arrow 13.5
    Average value in the tests
Crucial Technology BLS4G4D26BFSB.8FB 4GB Reasons to consider
Crucial Technology BLS4G4D26BFSB.8FB 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    39 left arrow 77
    Around -97% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 5300
    Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 39
  • Read speed, GB/s
    3,405.2 left arrow 13.0
  • Write speed, GB/s
    2,622.0 left arrow 13.5
  • Memory bandwidth, mbps
    5300 left arrow 21300
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 2808

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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