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Samsung M3 93T5750CZA-CE6 2GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Overall score
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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 10
    Average value in the tests
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB Reasons to consider
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    52 left arrow 77
    Around -48% lower latency
  • Faster write speed, GB/s
    7.6 left arrow 2,622.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 52
  • Read speed, GB/s
    3,405.2 left arrow 10.0
  • Write speed, GB/s
    2,622.0 left arrow 7.6
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 2169

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

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Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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