RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Below the latency in the PassMark tests, ns
77
86
Around 10% lower latency
Faster reading speed, GB/s
3
12.1
Average value in the tests
Reasons to consider
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Report a bug
Faster write speed, GB/s
5.7
2,622.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
86
Read speed, GB/s
3,405.2
12.1
Write speed, GB/s
2,622.0
5.7
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
1220
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMD32GX4M4A2666C16 8GB
Samsung M3 93T5750CZA-CE6 2GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Kingston 9905403-444.A00LF 4GB
Kingston MSI32D4S2S1ME-8 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMSX64GX4M4A2666C18 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston KHX3600C17D4/8GX 8GB
AMD R5S38G1601U2S 8GB
Kingston 9965662-016.A00G 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM2400HLB-8G 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Apacer Technology 76.B305G.D500B 4GB
Micron Technology 16JTF1G64AZ-1G6E1 8GB
Corsair CMW32GX4M4C3200C16 8GB
Kingston 9965525-140.A00LF 8GB
Panram International Corporation W4U2400PS-8G 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston CAC24D4S7D8MB-16 16GB
G Skill Intl F5-6400J3239G16G 16GB
Transcend Information JM3200HLG-8G 8GB
Report a bug
×
Bug description
Source link