RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Memphis Electronic D4SO1G724GI-A58SD 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Memphis Electronic D4SO1G724GI-A58SD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
11.7
Average value in the tests
Reasons to consider
Memphis Electronic D4SO1G724GI-A58SD 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
77
Around -157% lower latency
Faster write speed, GB/s
6.6
2,622.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
30
Read speed, GB/s
3,405.2
11.7
Write speed, GB/s
2,622.0
6.6
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
1832
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Memphis Electronic D4SO1G724GI-A58SD 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
AMD R538G1601U2S 8GB
SK Hynix HMA82GU6AFR8N-TF 16GB
Kingston KHX1600C9D3/8G 8GB
Kingston HP26D4U9S8ME-8 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Corsair CMX8GX3M2A1600C11 4GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-3600C18-16GVK 16GB
Kingston 9905403-011.A03LF 2GB
Kingston KHX2666C16D4/16GX 16GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
AMD AE34G1601U1 4GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Panram International Corporation D4U2666P-8G 8GB
Hexon Technology Pte Ltd HEXON 1GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3200C15-8GTZ 8GB
Report a bug
×
Bug description
Source link