RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
20.2
Average value in the tests
Faster write speed, GB/s
2,622.0
16.2
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
77
Around -328% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
18
Read speed, GB/s
3,405.2
20.2
Write speed, GB/s
2,622.0
16.2
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
3536
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-YK0 16GB
Corsair CMR64GX4M4C3466C16 16GB
Samsung M471B5273DH0-CK0 4GB
Corsair CMK16GX4M2Z3600C20 8GB
SK Hynix DDR2 800 2G 2GB
Kingston KMKYF9-MID 8GB
Kingston 9965525-144.A00LF 8GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 9905625-004.A03LF 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3000C16-8GSXWB 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Team Group Inc. TEAMGROUP-UD4-2133 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3200C16-4GRK 4GB
Samsung M3 78T5663FB3-CF7 2GB
Corsair CM4X8GF2400Z16K4 8GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9965640-013.A01G 32GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Corsair VS2GB1333D4 2GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston ACR512X64D3S13C9G 4GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
Report a bug
×
Bug description
Source link