RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
17.2
Average value in the tests
Faster write speed, GB/s
2,622.0
13.6
Average value in the tests
Reasons to consider
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
77
Around -185% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
27
Read speed, GB/s
3,405.2
17.2
Write speed, GB/s
2,622.0
13.6
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
763
3292
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
Corsair CMV16GX4M1A2133C15 16GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMK32GX4M2C3333C16 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Smart Modular SF4642G8CK8I8HLSBG 16GB
SK Hynix DDR2 800 2G 2GB
Kingston 9965662-016.A00G 16GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905743-045.A00G 16GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology 16G4UD2400.C16BD1 16GB
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-4133C19-8GTZA 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Essencore Limited KD4AGS88C-32N220D 16GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Kingston KF3600C16D4/16GX 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Report a bug
×
Bug description
Source link