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Samsung M323R2GA3BB0-CQKOD 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB

Samsung M323R2GA3BB0-CQKOD 16GB vs Micron Technology V-GeN D4V16GL24A8R 16GB

Overall score
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Overall score
star star star star star
Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Differences Specifications Comments

Differences

Samsung M323R2GA3BB0-CQKOD 16GB Reasons to consider
Samsung M323R2GA3BB0-CQKOD 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 68
    Around 63% lower latency
  • Faster write speed, GB/s
    12.1 left arrow 8.9
    Average value in the tests
Micron Technology V-GeN D4V16GL24A8R 16GB Reasons to consider
Micron Technology V-GeN D4V16GL24A8R 16GB
Report a bug
  • Faster reading speed, GB/s
    16.9 left arrow 13.4
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M323R2GA3BB0-CQKOD 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Main characteristics
  • Memory type
    DDR5 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 68
  • Read speed, GB/s
    13.4 left arrow 16.9
  • Write speed, GB/s
    12.1 left arrow 8.9
  • Memory bandwidth, mbps
    19200 left arrow 19200
Other
  • Description
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    3419 left arrow 2007

Samsung M323R2GA3BB0-CQKOD 16GB RAM comparisons

Micron Technology 36ASF2G72PZ-2G1A2 16GB
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Micron Technology V-GeN D4V16GL24A8R 16GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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