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Micron Technology 36ASF2G72PZ-2G1A2 16GB
Samsung M323R2GA3BB0-CQKOD 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB vs Samsung M323R2GA3BB0-CQKOD 16GB

Overall score
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Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Overall score
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Differences Specifications Comments

Differences

Micron Technology 36ASF2G72PZ-2G1A2 16GB Reasons to consider
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Report a bug
Samsung M323R2GA3BB0-CQKOD 16GB Reasons to consider
Samsung M323R2GA3BB0-CQKOD 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 52
    Around -108% lower latency
  • Faster reading speed, GB/s
    13.4 left arrow 10.2
    Average value in the tests
  • Faster write speed, GB/s
    12.1 left arrow 8.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 17500
    Around 1.1 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR5
  • Latency in PassMark, ns
    52 left arrow 25
  • Read speed, GB/s
    10.2 left arrow 13.4
  • Write speed, GB/s
    8.2 left arrow 12.1
  • Memory bandwidth, mbps
    17500 left arrow 19200
Other
  • Description
    PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • Timings / Clock speed
    no data left arrow no data / 2400 MHz
  • Ranking PassMark (The more the better)
    2319 left arrow 3419

Micron Technology 36ASF2G72PZ-2G1A2 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M323R2GA3BB0-CQKOD 16GB RAM comparisons

Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
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