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Samsung M378A1G43DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Compare
Samsung M378A1G43DB0-CPB 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Overall score
Samsung M378A1G43DB0-CPB 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1G43DB0-CPB 8GB
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Faster reading speed, GB/s
15
13.5
Average value in the tests
Faster write speed, GB/s
10.3
10.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
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Below the latency in the PassMark tests, ns
29
36
Around -24% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378A1G43DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
36
29
Read speed, GB/s
15.0
13.5
Write speed, GB/s
10.3
10.2
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2569
2088
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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