RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1G43DB0-CPB 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Compare
Samsung M378A1G43DB0-CPB 8GB vs Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Overall score
Samsung M378A1G43DB0-CPB 8GB
Overall score
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1G43DB0-CPB 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
72
Around 50% lower latency
Faster write speed, GB/s
10.3
8.0
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Report a bug
Faster reading speed, GB/s
15.3
15
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378A1G43DB0-CPB 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
36
72
Read speed, GB/s
15.0
15.3
Write speed, GB/s
10.3
8.0
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2569
1593
Samsung M378A1G43DB0-CPB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Samsung M378A1G43DB0-CPB 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Kingston 9965525-018.A00LF 4GB
Terabyte Co Ltd RCX2-16G3000R 8GB
Corsair CM5S16GM4800A40K2 16GB
G Skill Intl F4-3200C18-8GRS 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
A-DATA Technology DQVE1908 512MB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
Corsair CMV4GX3M1B1600C11 4GB
A-DATA Technology DDR4 2400 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Apacer Technology 78.CAGNT.AR40B 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-2400C16-8GRS 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Transcend Information JM2400HSB-8G 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4SFS824A.C8FBR1 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-4266C17-16GTZRB 16GB
Kingston ACR16D3LS1KNG/4G 4GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
Samsung M4 70T2953EZ3-CE6 1GB
Apacer Technology 78.CAGP7.AFW0C 8GB
Report a bug
×
Bug description
Source link