RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
67
Around 51% lower latency
Faster reading speed, GB/s
17.6
15.9
Average value in the tests
Faster write speed, GB/s
12.0
8.4
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
67
Read speed, GB/s
17.6
15.9
Write speed, GB/s
12.0
8.4
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2910
1895
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378A1K43BB1-CTD 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3200C16-8GVKB 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Kingston ACR16D3LS1KBG/8G 8GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Kingston 9905471-006.A00LF 4GB
G Skill Intl F4-3600C14-16GTZR 16GB
Kingston 9905403-156.A00LF 2GB
Transcend Information TS512MSH64V4H 4GB
Kingston 9965516-112.A00LF 16GB
Apacer Technology 78.BAGNF.40C0B 4GB
AMD R534G1601U1S-UO 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 9905316-106.A02LF 1GB
Kingston HP24D4U7S8MH-8 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Avant Technology J642GU42J7240N4 16GB
Kingston 9965516-430.A00G 16GB
Kingston 9965662-013.A01G 16GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-2933C16-8GFX 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Transcend Information TS512MSH64V1H 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3300C16-4GRKD 4GB
Report a bug
×
Bug description
Source link