RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs Micron Technology 16ATF1G64AZ-2G3A2 8GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Faster reading speed, GB/s
17.6
15.5
Average value in the tests
Faster write speed, GB/s
12.0
9.8
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
33
Around -38% lower latency
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
24
Read speed, GB/s
17.6
15.5
Write speed, GB/s
12.0
9.8
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2910
2509
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-2666C19-8GVK 8GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C16-8GVSB 8GB
Samsung M471B5673FH0-CF8 2GB
Samsung M393A2K43BB1-CRC 16GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
Kingston 99U5584-004.A00LF 4GB
Kingston KV0M5R-HYD 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
Mushkin MR[A/B]4U320GJJM8G 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Samsung M4 70T2864QZ3-CF7 1GB
AMD R748G2400U2S 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3600C19-8GSXK 8GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Report a bug
×
Bug description
Source link