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Samsung M378A1K43EB2-CWE 8GB
Micron Technology 4ATF51264HZ-3G2J1 4GB

Samsung M378A1K43EB2-CWE 8GB vs Micron Technology 4ATF51264HZ-3G2J1 4GB

Overall score
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Overall score
star star star star star
Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Differences Specifications Comments

Differences

Samsung M378A1K43EB2-CWE 8GB Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 42
    Around 21% lower latency
  • Faster reading speed, GB/s
    17.6 left arrow 15.7
    Average value in the tests
Micron Technology 4ATF51264HZ-3G2J1 4GB Reasons to consider
Micron Technology 4ATF51264HZ-3G2J1 4GB
Report a bug
  • Faster write speed, GB/s
    12.4 left arrow 12.0
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 42
  • Read speed, GB/s
    17.6 left arrow 15.7
  • Write speed, GB/s
    12.0 left arrow 12.4
  • Memory bandwidth, mbps
    25600 left arrow 25600
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2910 left arrow 2352

Samsung M378A1K43EB2-CWE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Micron Technology 4ATF51264HZ-3G2J1 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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