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Samsung M378A5244CB0-CTD 4GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB

Samsung M378A5244CB0-CTD 4GB vs Micron Technology 18ASF2G72AZ-2G6D1 16GB

Overall score
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Overall score
star star star star star
Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Differences Specifications Comments

Differences

Samsung M378A5244CB0-CTD 4GB Reasons to consider
Samsung M378A5244CB0-CTD 4GB
Report a bug
Micron Technology 18ASF2G72AZ-2G6D1 16GB Reasons to consider
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 36
    Around -44% lower latency
  • Faster reading speed, GB/s
    16.8 left arrow 15.8
    Average value in the tests
  • Faster write speed, GB/s
    12.8 left arrow 11.8
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378A5244CB0-CTD 4GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 25
  • Read speed, GB/s
    15.8 left arrow 16.8
  • Write speed, GB/s
    11.8 left arrow 12.8
  • Memory bandwidth, mbps
    21300 left arrow 21300
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2497 left arrow 2989

Samsung M378A5244CB0-CTD 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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