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Samsung M378B5173EB0-CK0 4GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB

Samsung M378B5173EB0-CK0 4GB vs Micron Technology 36ASF2G72PZ-2G1B1 16GB

Overall score
star star star star star
Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Overall score
star star star star star
Micron Technology 36ASF2G72PZ-2G1B1 16GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Differences Specifications Comments

Differences

Samsung M378B5173EB0-CK0 4GB Reasons to consider
Samsung M378B5173EB0-CK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    42 left arrow 51
    Around 18% lower latency
  • Faster reading speed, GB/s
    13.9 left arrow 9.9
    Average value in the tests
Micron Technology 36ASF2G72PZ-2G1B1 16GB Reasons to consider
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5173EB0-CK0 4GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    42 left arrow 51
  • Read speed, GB/s
    13.9 left arrow 9.9
  • Write speed, GB/s
    8.1 left arrow 8.1
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2150 left arrow 2314

Samsung M378B5173EB0-CK0 4GB RAM comparisons

Crucial Technology CT51264BA1339.M16F 4GB
Essencore Limited KD48GU880-26N160T 8GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB RAM comparisons

Samsung M393B1G70BH0-CK0 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Samsung M378B5173EB0-CK0 4GB
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