RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5273CH0-CH9 4GB
Essencore Limited KD48GU880-36A180Z 8GB
Compare
Samsung M378B5273CH0-CH9 4GB vs Essencore Limited KD48GU880-36A180Z 8GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
Essencore Limited KD48GU880-36A180Z 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Essencore Limited KD48GU880-36A180Z 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
37
Around -9% lower latency
Faster reading speed, GB/s
22.6
13.2
Average value in the tests
Faster write speed, GB/s
16.4
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
Essencore Limited KD48GU880-36A180Z 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
34
Read speed, GB/s
13.2
22.6
Write speed, GB/s
8.4
16.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
3597
Samsung M378B5273CH0-CH9 4GB RAM comparisons
Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Essencore Limited KD48GU880-36A180Z 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5273CH0-CH9 4GB
Essencore Limited KD48GU880-36A180Z 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMSX32GX4M2A3200C22 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Panram International Corporation PUD42400C168GVS 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Panram International Corporation PUD42400C154GNJW 4GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3333C16-16GTZ 16GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2400C17-4GVR 4GB
SK Hynix HMT325S6CFR8C-H9 2GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston X2YH1K-MIE 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Gloway International (HK) STK4U2400D17161C 16GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-4400C19-32GVK 32GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
Report a bug
×
Bug description
Source link