RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3866C18-8GTZSW 8GB
Compare
Samsung M378B5273CH0-CH9 4GB vs G Skill Intl F4-3866C18-8GTZSW 8GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
G Skill Intl F4-3866C18-8GTZSW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
Reasons to consider
G Skill Intl F4-3866C18-8GTZSW 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
37
Around -106% lower latency
Faster reading speed, GB/s
20.9
13.2
Average value in the tests
Faster write speed, GB/s
17.0
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3866C18-8GTZSW 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
18
Read speed, GB/s
13.2
20.9
Write speed, GB/s
8.4
17.0
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2143
3668
Samsung M378B5273CH0-CH9 4GB RAM comparisons
Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB
G Skill Intl F4-3866C18-8GTZSW 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hexon Technology Pte Ltd HEXON 1GB
Mushkin MR[A/B]4U320LLLM16G 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMSO16GX4M2A2133C15 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-2933C14-16GTZRX 16GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMH32GX4M4D3600C18 8GB
Samsung M378B5273CH0-CH9 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMK64GX4M8A2400C14 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK32GX4M4A2133C13 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology W642GU42J5213N8 16GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
Samsung M393B5170FH0-CK0 4GB
Corsair CMWB8G1L3200K16W4 8GB
Report a bug
×
Bug description
Source link