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Samsung M378B5673EH1-CF8 2GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Micron Technology 9ASF51272PZ-2G1B1 4GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Micron Technology 9ASF51272PZ-2G1B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
51
Around 45% lower latency
Faster reading speed, GB/s
12.7
9.6
Average value in the tests
Reasons to consider
Micron Technology 9ASF51272PZ-2G1B1 4GB
Report a bug
Faster write speed, GB/s
7.8
7.5
Average value in the tests
Higher memory bandwidth, mbps
17000
8500
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
51
Read speed, GB/s
12.7
9.6
Write speed, GB/s
7.5
7.8
Memory bandwidth, mbps
8500
17000
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1988
2248
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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