RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Compare
Samsung M378B5673EH1-CF8 2GB vs SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Reasons to consider
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around -17% lower latency
Faster reading speed, GB/s
16.7
12.7
Average value in the tests
Faster write speed, GB/s
12.1
7.5
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
24
Read speed, GB/s
12.7
16.7
Write speed, GB/s
7.5
12.1
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1988
2904
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Kingston 99U5663-006.A00G 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3000C14-16GVKD 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KHX2133C13S4/16G 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
Samsung M3 78T5663EH3-CF7 2GB
Transcend Information AQD-D4U4GN21-SG 4GB
Samsung M378B5773CH0-CH9 2GB
Kingston 99U5713-003.A00G 4GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9905598-009.A00G 8GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung M471A1K1KBB0-CPB 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3333C16-16GTZ 16GB
AMD R5316G1609U2K 8GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
Report a bug
×
Bug description
Source link