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Samsung M378B5673EH1-CF8 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Reasons to consider
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
28
Around -4% lower latency
Faster reading speed, GB/s
18.7
12.7
Average value in the tests
Faster write speed, GB/s
17.8
7.5
Average value in the tests
Higher memory bandwidth, mbps
25600
8500
Around 3.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
27
Read speed, GB/s
12.7
18.7
Write speed, GB/s
7.5
17.8
Memory bandwidth, mbps
8500
25600
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
7-7-7-20 / 1066 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1988
3963
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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