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Samsung M378B5673EH1-CF8 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Samsung M378B5673EH1-CF8 2GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.8 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 8500
    左右 3.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 27
  • 读取速度，GB/s
    12.7 left arrow 18.7
  • 写入速度，GB/s
    7.5 left arrow 17.8
  • 内存带宽，mbps
    8500 left arrow 25600
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3963

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
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内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M471B1G73QH0-YK0 8GB
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SK Hynix HMA81GR7MFR8N-UH 8GB
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内存RAM
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Samsung M471B5173DB0-YK0 4GB
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内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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Kingston 9905712-010.A00G 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
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Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
内存RAM
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Samsung M391B5673EH1-CH9 2GB
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Kingston KVR26N19D8/16 16GB
内存RAM