RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Compare
Samsung M378B5673FH0-CH9 2GB vs Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Overall score
Samsung M378B5673FH0-CH9 2GB
Overall score
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673FH0-CH9 2GB
Report a bug
Faster reading speed, GB/s
14.4
13
Average value in the tests
Faster write speed, GB/s
9.5
8.6
Average value in the tests
Reasons to consider
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
35
Around -9% lower latency
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
35
32
Read speed, GB/s
14.4
13.0
Write speed, GB/s
9.5
8.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2321
2243
Samsung M378B5673FH0-CH9 2GB RAM comparisons
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB RAM comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Team Group Inc. Team-Elite-1333 4GB
Corsair CM4X4GF2400C14K4 4GB
Kingston KVR533D2N4 512MB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
TwinMOS 8DHE3MN8-HATP 2GB
takeMS International AG TMS1GB264D083805EV 1GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Kingston K1N7HK-ELC 2GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
Samsung M393B1G70BH0-YK0 8GB
Kingston ACR26D4U9S8MH-8 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston 9905625-075.A00G 16GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
Kingston ACR256X64D3S1333C9 2GB
Kingston X75V1H-MIE 32GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Heoriady M378A1K43BB2-CTD 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Heoriady M471A1K43BB1-CRC 16GB
‹
›
Report a bug
×
Bug description
Source link