RAM comparison Samsung M378B5773DH0-CH9 2GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Samsung M378B5773DH0-CH9 2GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Overall score

Samsung M378B5773DH0-CH9 2GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378B5773DH0-CH9 2GB

Reasons to consider
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Below the latency in the PassMark tests, ns

32 39

Around -22% lower latency
Faster reading speed, GB/s

19.4 11.7

Average value in the tests
Faster write speed, GB/s

16.3 7.2

Average value in the tests
Higher memory bandwidth, mbps

21300 10600

Around 2.01 higher bandwidth

Complete list of technical specifications

Samsung M378B5773DH0-CH9 2GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

1749 3726

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns